Abstract
The effect of trapped charges on the transverse acoustoelectric voltage (TAV) is investigated with the aim of extending the use of TAV measurements to the study of semiconductors with high defect density. Even if surface acoustic wave frequencies are as high as 100 MHz, charge trapping can influence the TAV. This has been verified by two particular experiments performed on Si/SiO(2) structures with high density of interface states. A theoretical model is proposed to explain the effects of the presence of deep-trap levels on the TAV. Novel boundary conditions for the acoustoelectric equations are introduced and an approximate solution for the TAV amplitude is presented. The model is used to define a novel procedure for the determination of interface-states' density using TAV versus bias voltage measurements.
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