Effect of DC bias on the deposition rate using RF-DC coupled magnetron sputtering for Mg thin films

Abstract

The dependence of the deposition rate of Mg thin films on a DC bias using RF-DC coupled magnetron sputtering was investigated. When an extremely low RF power (5 W) and DC bias were applied simultaneously to the target, the glow discharge took place at a low DC bias of −30 V whose value was obtained about one-fifth of the conventional DC magnetron sputtering case. Mg films have been prepared at the RF power value of 5 W and the DC bias voltage values of −50- −200 V. The obtained values of the deposition rate varied from 9–62 nm/min. It is shown that the film growth coefficient (deposition rate/ion current density) of Mg films is significantly influenced by the target DC bias.