Abstract
Yttrium iron garnet (YIG) is a prominent magnetic (ferrimagnetic) insulator and an excellent material for wide ranging microwave and millimeter-wave applications. In polycrystalline form it exhibits high dielectric loss due to contributions coming from grain & grain boundaries, and Fe heterovalency. We have investigated the effect of dc bias voltage on the dielectric properties of YIG in a wide range of temperature (100 - 600 K) and frequencies (100 Hz - 1 MHz). Consistent with previous observations, without bias a dominant frequency dispersion due to hopping of the Fe2＋ & Fe3＋ is observed in low temperature region and a wider frequency dispersion is observed at higher temperatures arising due to grain-grain boundary contributions. Application of a small dc bias voltage increases the dielectric constant and reduces the dielectric loss significantly at higher frequencies. The DC bias-induced improvements are much more dramatic at higher temperatures, where grain boundary contributions dominate. Our detailed analysis of dc and ac conductivity data show that the dc bias suppresses the grain boundary contributions significantly and at the same time it boosts the polarizability due to the Fe2＋/Fe3＋ hopping.
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