Abstract
The distributions of the electroluminescence of AlGaInP-based flip-chip red light-emitting diodes with a size of <inline-formula> <tex-math notation="LaTeX">$100\,\,\mu \text{m}\,\,\times 200\,\,\mu \text{m}$ </tex-math></inline-formula> have been obtained via microscopic hyperspectral imaging by capturing spatially resolved light emission from the side of a transparent substrate. As the injected DC current exceeds the current corresponding to the maximum external quantum efficiency, the light emission from the current crowding region decreases due to the self-heating effect, whereas the emission of the region corresponding to the anode becomes dominant due to the low heat resistance.
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