Abstract
We have investigated the effect of dc current on magnetic domain wall (DW) depinning fields in a perpendicularly magnetized Co/Ni nanowire by utilizing the giant magnetoresistance (GMR) effect. It was found that the current assisted (prevented) the domain wall depinning when the electron flow was parallel (antiparallel) to the DW depinning direction. The depinning field was found to exhibit a linear dependence on the dc current density, from which the efficiency of the effective field was estimated to be -1.5×10-14 T m2/A.
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