Abstract
Highly (1 0 0)- and (1 1 1)-oriented ferroelectric lead zirconate titanate PbZr 0.53Ti 0.47O 3 (PZT) thin films have been grown in situ on TiO x /Pt/TiO 2/SiO 2/Si substrates by RF magnetron sputtering. Using electrostatic force microscopy (EFM), we show that the threshold voltage required to switch the ferroelectric domains is strongly dependent on the crystallographic orientation of the film, a (1 1 1)-oriented lead zirconate titanate PbZr x Ti 1− x O 3 (PZT) needs a higher voltage compared to the (1 0 0)-oriented one. Also, we demonstrate that these values are fully correlated to the coercive voltage values determined at the macroscopic scale, using large area electrodes.
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