Abstract
Effect of annealing on dielectric properties of Si 3N 4 ceramics at 2 GHz was studied using two kinds of Si 3N 4 samples which were sintered with different amounts of Yb 2O 3 and SiO 2 as sintering additives. The dielectric loss (tan δ) of the sample containing glassy phase was ∼20 × 10 −4, which was significantly higher than that of the sample with crystalline secondary phase. The tan δ of the former sample was reduced significantly by the annealing at 1300 °C for 24 h. The decrease in tan δ due to the annealing was associated with the crystallization of glassy phase, indicating that the contribution of glassy phase to the tan δ was substantially larger than those of crystalline phases. By contrast, dielectric constant was independent on the composition and was not affected by the annealing. It was revealed that tan δ of sintered Si 3N 4 could be lowered by eliminating the glassy phase.
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