Abstract
This letter reports the fabrication of polycrystalline silicon (poly-Si)tunneling field effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 μm are attained. This makes it possible to fabricate tunneling FET with high-quality poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/off ratio of 6.02 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> . Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.
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