Abstract
We studied the effects of crucible rotation on distribution of oxygen concentration in a crystal during the unidirectionally solidification process of multicrystalline silicon for solar cells. Oxygen concentration in the melt increased when crucible rotation rate was increased. Oxygen concentration in the silicon crystal was distributed inhomogeneously in the radial direction when crucible rotation rate was increased. This is due to suppression of oxygen transport. Consequently, less oxygen was transported from the crucible wall to the center of the melt. We found that oxygen concentration is small in the whole ingot and homogenized in the radial direction when crucible rotation rate during the solidification process is set to 1 rpm.
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