Abstract
LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage ( C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 10 14 to 8 × 10 15 carriers per cm 3. DLTS data has shown that all epitaxial layers have deep level traps.
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