Abstract
Zn1.4Al1.2Ge0.4O4: xCr3+ (x = 0.1%, 0.25%, 0.5%, 1%, 2%) phosphors were prepared at 1400 °C by conventional solid-state reaction, and their phase compositions and luminescence properties were well characterized by means of XRD, photoluminescence spectra, decay curves and TL techniques. With Cr3+ doped Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors exhibited near-infrared emission at 696 nm due to the 2E → 4A2 transition of Cr3+ ions. The experimental results reveal that the Cr3+ doping concentration plays the crucial role in the luminescence performance of Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors. When the Cr3+ concentration was determined to be 1%, Zn1.4Al1.2Ge0.4O4: Cr3+ phosphors obtained optimal the luminescence and afterglow performance. The mechanism of phosphor has been discussed. And the TL results revealed the depth and concentration of traps in the phosphor will be affected by the Cr3+ doping concentration.
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