Abstract
AbstractIn this study, the effect of BTA on polishing behavior was investigated as functions of H2O2, slurry pH and abrasive particles. The addition of BTA effectively prevented Cu from etching by forming the passivation layer of Cu-BTA regardless of pH and H2O2 concentration in slurry. A thinner passivation layer was grown on Cu in BTA added slurry solutions with a higher contact angle of 60°. The dynamic etch rate, the removal rate with abrasive free slurry, also decreased when BTA was added in slurry at pH 2, 4 and 6. The removal rate of Cu was strongly dependent on types of abrasive particles in slurry. The larger hardness of slurry abrasive particles, the higher removal rates of Cu. The reduction of removal rates in BTA added slurry was determined by the competition between chemical dissolution rate and mechanical abrasion rate.
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