Effect of Copper Line Geometry and Process Parameters on Interconnect Microstructure and Degradation Processes

Abstract

Abstract The atomic transport processes which could cause degradation mechanisms in Cu interconnects are described. The influence of interconnect line width, barrier type and anneal process on the microstructure and reliability of the inlaid Cu lines are discussed. Grain size and texture measurements have been performed at blanket films and at arrays of Cu lines using advanced analytical techniques. The median grain size decreases with decreasing line width, and it can be influenced by heat treatments. The crystallographic texture is predominantly {111} out-of-plane with sidewall-oriented grains in narrow Cu lines. The grains have an in-plane preferred orientation with the 〈110〉 direction parallel to the sidewall normal. The Cu texture is influenced by barrier structure and thickness.