Abstract
Effect of cooling procedure after annealing on the electrical properties of Cd0.2Hg0.8Te (CMT) epitaxial films grown by liquid phase epitaxy has been investigated to obtain the CMT films with low carrier concentration of 1014 cm−3 reproducibly. Annealing has been performed at the temperature range from 260 to 350°C for 8 h in a fixed Hg vapor pressure. The quenching and the gradual cooling over a duration of 200 min after annealing have been employed for the cooling procedures. For quenched CMT samples, hole concentration decreases with decreasing anneal temperature and conduction type conversion from p to n is observed at 300°C. For the gradual cooling, all samples show n-type conduction for all annealing temperatures. Electrical properties of annealed layers strongly depend on the cooling procedure. The difference in electrical properties of the annealed CMT between two types of cooling procedure is mainly attributed to the difference in the annihilation of Hg vacancies during cooling procedure. The decrease of Hg vacancies during quenching is negligible, while Hg vacancies are annihilated during gradual cooling by rapid Hg diffusion. The diffusion coefficient of Hg is estimated more than 10−9 cm2/s and this value is two orders of magnitude larger than that obtained by radiotracer technique.
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