Abstract
Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-AlxGa1−xAs single quantum well lasers having confining layer aluminum compositions in the range 0.20≤x≤0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.
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