Abstract
Highly (1 1 1)-oriented (Pb,Ba)ZrO3 (PBZ) thin films were deposited on BaPbO3(BPO) electrode at different deposition temperatures and different thicknesses. As the deposition temperature increased, the dielectric constant and tunability increased from 150 and 4% to 500 and 56%, respectively. A current transient peak observed prior to dielectric degradation can be related to oxygen vacancy migration (redistribution) with space-charge-limited current transient or modulation of the electric conductivity. We infer that an interfacial layer lying between the PBZ and BPO effectively increases the oxygen vacancy (density ∼1020 cm−3) mobility by Pb4+ diffusing into the PBZ films.
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