Abstract
The Hall measurements of n- and p-type Si and GaAs samples were carried out under concentrated sunlight illumination to discuss the effect of illumination on mobility. We found that the carrier mobilities estimated from the experimental results decreased as the illumination increased. In addition, we deduced that the lattice scattering and sample deterioration do not decrease the mobility. We then concluded that the decrease in mobility is one of the reasons for the reduction in conversion efficiency of the concentrator solar cells.
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