Abstract
Abstract Ce 3+ -doped β-SiAlON blue phosphors with composition of Ce x Si 6− z Al z O z N 8− z (0.2≤ z ≤4) at a fixed x =0.01 were synthesized by the gas pressure sintering method. The phases and photoluminescence properties were found to be directly correlated to the z value. Higher z value would result in the formation of AlN polytypoid impurity phases. The optimal z value resides in the range 0.3≤ z ≤0.5, by which high purity of β-SiAlON phase, good crystallinity and fine grain size were obtained, leading to the best luminescence properties. These phosphors could be a good candidate for application in white light-emitting diodes using InGaN-based near–ultraviolet chips.
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