Abstract
Te (tellurium) film used for semiconductors and photocathode is prepared by a resistive heating evaporation system in this paper. The evaporation property is assessed by comparing the evaporation rate of In-Te alloy with different compositions and structures. The morphology and structure of Te films prepared by In5Te95, In10Te90, and In15Te85 alloy are characterized. The result shows that the In-Te alloy consists of the Te phase and the In2Te5 phase with a hexagonal and monoclinic structure. The primary Te phase and eutectic Te phase are obtained in In5Te95 alloy, and the eutectic Te phase is displayed in In10Te90 and In15Te85 alloy only. The content of Te is 100% in the primary Te phase and eutectic Te phase. Alloying has reduced the evaporation of Te effectively, while the evaporation rate is affected by the distribution of the Te phase. The Te films prepared with three alloys are consisting of the needle-shape Te grain. The Te film deposited from the eutectic Te phase has smaller grain size and the film thickness is affected by the evaporation rate. The composition of Te is confirmed by XPS. The peak value of XPS spectra matches the Te3d5/2 and Te3d3/2.
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