Effect of composition and deformation temperature on the annealing behavior of stacking faults in α-Cu-Ge alloys

Abstract

The disappearance of stacking faults in filings of α-Cu-Ge alloys (5.6, 6.7, 7.7, and 8.5 at. pct Ge) prepared at various deformation temperatures has been studied with X-ray diffraction. The faults anneal out in two stages, the second of which is diffusion controlled. The time necessary to anneal out all of the faults depends on both alloy composition and deformation temperature. The dependence of the number of faults on the deformation temperature has also been determined.