Effect of combined radiation processing on parameters of Si-based MOS transistors

Abstract

ABSTRACTThe variation of parameters of Si-based MOS-transistors affected by combined infrared and X- ray photons processing were presented. It was found that X-ray irradiated transistor under incoherent infrared radiation is characterized by lowering of radiation sensitivity. As positive charge and its radiation-induced rate of generation in undergate SiO2 insulator decreases, we observe a reduction of both ΔUNo and voltage threshold Uth transistor components. Under pulsed laser processing (λ = 1.06 µm, τ = 10−3s) of the X-rays irradiated transistor the energy density of laser beam corresponding to the minimum threshold voltage was established. It was shown that the combined treatment can be effectively used to control the transistor parameters. The model describing the radiation changes of parameters in Si-SiO2 structure was proposed. The effect of Na+, K+ and H+ ions in undergate insulator on variation of charge state and interface reconstruction under laser irradiation were predicted by proposed model.