Abstract
A study of conductivity and microhardness was performed on plastically deformed samples of germanium and silicon. The dependences of the microhardness on the degree of plastic deformation of germanium and silicon have noticeable differences.The microhardness of germanium and silicon varies significantly with a change in the majority carriers (holes) concentration and their Hall mobility. A possible mechanism is proposed of changing of the strength properties of germanium and silicon at a change of the number of current carriers.
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