Abstract
In this paper, the dependence of the forward biased safe operating area (FBSOA) on the collector structures of the dielectrically-isolated (DI) lateral insulated gate bipolar transistor (LIGBT) has been analyzed. In addition to the on-state and switching characteristics, pulsed measurements were performed to determine the FBSOA of these devices. Two-dimensional (2-D) numerical simulations were performed to understand the physics behind the operation of devices fabricated with various collector designs. These studies reveal that some of the structures behave like the conventional LIGBT, while others behave like the LDMOSFET with respect to their FBSOA. Some of the structures also exhibit a unique high-voltage blocking ability while carrying current, while having much smaller breakdown voltages.
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