Effect of coherency strain on the deformation of In x Ga1− x As superlattices under nanoindentation and bending

Abstract

It has been shown elsewhere that the room temperature yield pressure of In x Ga1− x As superlattices measured by nanoindentation, decreases from a high value as the volume averaged strain modulation is increased, while at 500°C under uniaxial compression or tension the yield stress increases from a low value with increasing strain modulation. We have used cross-sectional transmission electron microscopy to examine the deformation mechanisms in these two loading regimes. At room temperature both twinning and dislocation flow was found with the proportion of twinning decreasing with increasing strain modulation. The coherency strain of the superlattice is retained in a twin but partially relaxed by dislocation flow. The strain energy released by the loss of coherency assists dislocation flow and weakens the superlattice. Twins are only nucleated when a critical elastic shear of about 7° is achieved at the surface. The plastic zone dimensions under the indent are finite at the yield point, with a width and depth of approximately 1.3 µm and 1.1 µm respectively. Under uniaxial compression and tension at 500°C the superlattices deform by dislocation flow along {111} planes. The most highly strained samples also partially relax through the formation of misfit dislocations.