Abstract
This paper describes the impact of thickness of cobalt silicide to the sentivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30 nm and non-silicided reference wafer have been used. The maximum sentivity for starting cobalt thickness of 12 nm has been obtained from both large area and long perimeter p-n junction. This corresponds to the low leakage current and series resistance.
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