Abstract
Using low-temperature molecular beam epitaxy, we experimentally examine the substitutions of Fe atoms for Co ones in Co${}_{3\ensuremath{-}x}$Fe${}_{x}$Si ($1.0\ensuremath{\le}x\ensuremath{\le}3.0$) Heusler-compound films grown on Si and Ge. The Co-Fe atomic substitution at $A$ and $C$ sites can be confirmed by the conversion electron M\"ossbauer spectroscopy measurements. The magnetic moment and the magnitude of spin signals in nonlocal spin-valve measurements are systematically changed with increasing $x$ in Co${}_{3\ensuremath{-}x}$Fe${}_{x}$Si. By assuming proper spin diffusion length for Co${}_{3\ensuremath{-}x}$Fe${}_{x}$Si on the basis of our previous work [Phys. Rev. B 85, 100404(R) (2012)], we experimentally verify that the Co-Fe substitution in Co${}_{3\ensuremath{-}x}$Fe${}_{x}$Si can directly affect the room-temperature spin polarization.
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