Abstract
The influence of the Co doping on the properties of zinc oxide films was investigated. The films were grown by oxygen and water assisted metal organic chemical vapor deposition (MOCVD). The large positive magnetoresistance (PMR) was observed in Co doped films at low temperatures while the negative magnetoresistance was observed in undoped ZnO films deposited under the same conditions. The relative variation of resistivity was comparable in the films grow by oxygen and water assisted MOCVD although the resistivity and its temperature dependence were significantly different. The magnitude of PMR increases with an increase of the Co content and with the decrease of temperature.
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