Effect of chirality and point defect on resonant characterization of single-walled boron nitride nanotube-based mass sensor

Abstract

In this article, the resonant behavior of a single-walled boron nitride nanotube (SWBNNT)-based mass sensor has been analyzed considering the chiral atomic structures and the presence of point defect along the length of the nanotube. The single atom vacancies and divacancy (BN divacancy) are considered as point defects. The resonant frequency-based analysis has been performed considering a finite element model of a cantilevered single-walled boron nitride nanotube, based on molecular structural mechanics. The analysis has been performed considering the different chiral atomic structures of a single-walled boron nitride nanotube, having a chiral angle of between 0° (zigzag) and 30° (armchair). Also, along with the effect of chirality, the presence of a point defect along the length of nanotube has been analyzed as a poor atomic structure of a single-walled boron nitride nanotube. The three different positions of point defect along the length of nanotube have been considered. The obtained results indicate that, for the particular size of nanotube, as the chiral angle decreases, the atomic structure of nanotube become more closely packed and ultimately effects the resonant behavior of nanotube. The presence of a point defect and its different positions along the length of nanotube effects the overall resonant behavior of a single-walled boron nitride nanotube, which is attributed due to change in the structural stiffness of the nanotube. The reported results can be used to identify the different types of considered point defects as well as its position along the length of nanotube. The present simulation approach is found to be very effectual, incorporates the different atomic structures of a single-walled boron nitride nanotube and simulates the different boundary conditions.