Abstract
We have identified a p-type layer on both sides of the interface formed by two directly bonded silicon wafers. The thickness and the hole concentration of the p-layer vary with the pretreatment of the wafer surface, temperature and bonding time. It is shown that the p-layer is formed by the diffusion of uncontrollable Al impurities adsorbed on the hydrophilic silicon surface. The layer is responsible for the barrier properties of the interface in n+-n and n-n structures and for a large p-n junction depth in bonded wafers with different types of conductivity.
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