Abstract
To make thin layered mono-crystal silicon carbide on silicon substrate, the hetero molecular beam epitaxial growth process is promising, in which both silicon and carbon must be made incident as their evaporated molecular states to silicon substrate. As there are some methods of evaporating the material, there exist several combinations that will considerably affect both the chemical and mechanical properties of newly deposited layers. The present study attempts to clarify the relationship between these chemical and mechanical properties and determine the guidelines for the combination and operating conditions in order to obtain the desired surface properties through a series of tests and evaluations.
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