Effect of Charge State in Nearby Quantum Dots on Quantum Hall Systems

Abstract

Transport properties have been measured on two-dimensional electron system (2DES) with a nearby InAs self-assembled quantum dot layer, in order to clarify the anomalous behavior of magnetoresistance, ρ xx , and Hall resistance, ρ xy at $\nu=\frac{1}{3}$ , which was an unsolved problem in our previous paper (Takehana et al.: J. Phys. Soc. Jpn. 75, 114713, 2006). The significant suppression of both ρ xx and ρ xy was found to be reduced in the vicinity of $\nu=\frac{1}{3}$ , which indicates that the fractional quantum Hall effect prevent the spin-flip process between localized electrons and that extended 2DES, according to the discussion of the previous paper.