Abstract
The differential tunnel conductance GS of the junction between a normal metal and a superconductor with a charge density wave (CDW) is calculated as a function of the voltage V across the junction. The results are averaged over the spread of superconducting and CDW energy gaps in the nanoscale-inhomogeneous superconductor. It is shown that, if both order parameters are nonzero, a dip-hump structure is formed beyond the superconducting gap of GS(V). If the phase of the CDW order parameter is not equal to π/2, a dip-hump structure will appear solely or mainly for one sign of the bias polarity. The results agree with the experimental data for Bi2Sr2CaCu2O8+δ and other high-temperature oxides
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