Abstract
Graphene-based field-effect transistors (FETs)have received widespread attention as an alternative for conventional silicon devices. The purpose of this paper is to present a new simulation scheme for the I-V characteristics of graphene based FETs. Using the same, we studied the channel length and width dependence behaviour of the transfer characteristics of graphene based FETs (GFETs)with various channel lengths from 0.75 μm to 1.25 μm and widths from 1.75 μm to 2.25 μm, From our study, we observed that, the Dirac point is independent of the channel length and width for the range of values considered. However, the magnitude of the current progressively increases with increase in width of the channel.
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