Abstract
Alkali metal treatment is an indispensable technology for obtaining highly efficient CuInSe2 (CIS) solar cells. This study evaluated the structural change of Cu(In,Ga)Se2 (CIGSe) and Cu(In,Ga)(S,Se)2 (CIGSSe) films with and without the CsF post-deposition treatment (CsF-PDT) (for CIGSe) and Cs treatment (for CIGSSe) by the Se K-edge depth-resolved X-ray absorption fine structure. The CIGSe films were deposited by a three-stage process, and the CIGSSe films were deposited by the sulfurization after the selenization method. Although CsF-PDT can re-form the surface of CIGSe film, the Cs treatment cannot modify the surface of the CIGSSe film. Our result suggests that the improvement is due to not only the surface reforming but also an effect on the inside of the CIGSe and CIGSSe films. This study provides useful information for the preparation of highly efficient CIS solar cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.