Abstract
The strong Ce-O-Si bonding between CeO2 abrasives and SiO2 film surface; i.e., the chemical tooth effect, improved planarization efficiency in CMP using ceria-based slurry as a result of nonlinear behavior of the removal rate. Removal rate is a power function of pressure and relative velocity (i.e., RR=kpavb). In particular, the high dependency of removal rate on pressure when a>1 results in a much higher material removal rate in the upper pattern than in the lower pattern. Therefore, the planarization efficiency of ceria-based slurry is better, from initial polishing time to the completion of the polishing step, than that of conventional silica-based slurry with an exponent value of a=1.
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