Abstract
WO 3 (Tungsten trioxide)-based varistors doped with CeO 2 were prepared and the microstructures, non-linear electrical properties, dielectric properties were investigated. All the doped samples revealed existence of monoclinic WO 3 phase without triclinic WO 3, resulting in stable electrical properties under a high electric field. Moreover, the electrical properties under a low electrical field are also stable because ion migration in the depletion layer is ignorable. The non-linear coefficient was not high, but the barrier voltage was extremely low with the value of about 0.04 V for the sample containing 2 mol% CeO 2. The permittivity of doped samples was higher than that of undoped samples, which could be attributed to the decrease in thickness of grain-boundary. CeO 2-doped WO 3 ceramic is a new kind of low voltage capacitor–varistor material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
