Abstract
The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl2 solution treatment have been studied with a major focus on the influence of CdCl2 treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250°C. Aqueous CdCl2 concentration varied from 0.3mol to 1.2mol with the annealing temperature from 360°C to 450°C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360°C with 0.3M to1.2M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl2 concentration and subsequent annealing temperature. The highest carrier concentration of 1.05×1014/cm3 was found for the CdTe thin films treated with 0.3M CdCl2 solution followed by an annealing treatment at 420°C for 20min.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
