Abstract
For a low dielectric constant inter-metal dielectric application, the low- k SiCOH film with a dielectric constant of 2.8–3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low- k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low- k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low- k film is slightly sacrificed due to the decrease of micropores in the deposited films.
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