Abstract
The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different carrier gas flow fields were studied by utilizing three types of precursor carrier which affected the local gas flow field significantly. The experiment results showed that the appropriate precursor vapor concentration could be achieved by local carrier gas flow field conditioning, resulting in single 2D MoS2 crystals of a large size and a high coating rate of 2D MoS2 crystal on the target substrate surface. The carrier gas flow also contributed to the growth of the 2D MoS2 crystal when it flew towards the target surface. The size of deposited single 2D MoS2 crystal reached tens of micrometers and a few layers of 2D MoS2 crystal were characterized and confirmed.
Highlights
We demonstrated the effect of the carrier gas flow field and precursor vapor distribution in the chemical vapor deposition (CVD) process of 2D MoS2 by simulation and experiments
The carrier gas flow field plays a vital role in the growth of 2D MoS2 crystal
The carrier gas flow field near the target surface was significantly influenced by the shape and size of the carrier of precursor MoO3
Summary
Chemical vapor deposition (CVD) has been one of the most promising methods for large area 2D MoS2 production [7,8,9]. MoO3 , MoCl5 , (NH4 ) MoS4 powder are used to offer molybdenum vapor source and sulfur powder to offer a sulfur vapor source, with Ar used as carrier gas to deliver the precursors onto the substrate on which the precursors react to form MoS2 crystal [10]. The size and shape of MoS2 crystal, the number of MoS2 crystal layers and the distribution of
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