Abstract
In this work we study the effect of free carriers on the self energy of short wavelength phonons in heavily doped n-type many valley semiconductors. We find that the presence of free carriers produces a measurable shift to lower energies in the phonon frequency. The magnitude of the calculated shifts shifts is large enough to warrant experimental determination of this quantity. Comparison of our calculations with experimental measurements would yield useful parameters describing the electron-phonon interaction for large q-phonons.
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