Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Abstract

Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated during heat treatment between 500 and 700 °C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500–700 °C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(1 0 0) is stable up to 600 °C.