Abstract
Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.
Highlights
Nuclear energy is an important type of clean energy and cannot be completely replaced currently.Silicon carbide (SiC) is an important material in TRISO-coated fuel particles—the type of nuclear fuel found in high-temperature gas-cooled reactors such as the Pebble Bed Reactor
Silicon carbide composite material has been investigated for use as a replacement for Zircaloy cladding in light water reactors
We study the effects of carbon concentration, incidence angle, incidence energy, and target temperature on the sputtering yield of SiC through Monte-Carlo (MC) and molecular dynamics (MD) simulation methods
Summary
Nuclear energy is an important type of clean energy and cannot be completely replaced currently. Carbon fiber-reinforced SiC composites do not perform brittleness in the fracture process, carbon fiber-reinforced SiC has a high thermal conductivity property, and it will be improved with the development of science and technology [38,39] It can be widely used in aerospace, deep sea, electronics, weapons, and nuclear fields as structural material. Sone conducted an experimental study of the sputtering yield of SiC with different atomic fractions of silicon and carbon bombarded by a 3.0 keV tritium ion beam [47] study. We study the effects of carbon concentration, incidence angle, incidence energy, and target temperature on the sputtering yield of SiC through Monte-Carlo (MC) and molecular dynamics (MD) simulation methods. We hope that our work might shed some light on the development of carbon fiber-reinforced SiC
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