Abstract
The GaAs capping layer significantly influences the structural and optoelectronic characteristics of the InAs quantum dot (QD). The capping rate modifies the essential parameters, such as size, shape, and composition, that determine the optical properties of the QDs. In this work, we present a theoretical model to study the effects of the capping rate on the absorption spectra of InAs dots embedded in the GaAs capping layer. The proposed model can be used for optimizing the structural and optical characteristics of InAs/GaAs QDs without using an annealing procedure or any capping material other than GaAs. In addition, the impact of three different GaAs capping layer growth rates on the performance of quantum dot solar cells is evaluated.
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