Abstract
Thin fully strained Si1−xGex/Si1−x−yGexCy/Si1−xGex heterostructures (x=0.2), with controlled C incorporation sites, were grown on Si substrates using ultrahigh vacuum chemical vapor deposition. Following the growth, layers were relaxed using rapid thermal annealing at 1000 °C for 30 s, and high degrees of relaxation of 65% and 59% were achieved with and without interstitial C, respectively. We show that the difference in cross hatch density and step height between two samples, which correspond to different misfit dislocation pileup behaviors, suggests controllability of SiGe relaxation via variation in C incorporation sites in the SiGeC layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
