Abstract
We have systematically investigated the effect of C and B sequential coimplantation on B-related acceptors and deep levels in 4H–SiC using thermal admittance spectroscopy. By increasing the concentration of coimplanted C, the density of deep levels decreased and was completely suppressed for a C and B ratio of 1:1. Moreover, the density and ionization energy of B acceptors increased and decreased, respectively, with increasing C concentration. However, we found that excess C content leads to the formation of a complex defect. Capacitance–voltage results also support the expected increase in the free hole concentration with increasing concentration of the coimplanted C atoms, which is followed by a decrease in the concentration under C-rich conditions. This is in reasonable agreement with the behavior of the B acceptors and deep defect levels. Therefore, the concentration of coimplanted C atoms is considered to be very sensitive to the formation of the B acceptor levels.
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