Effect of buffer layer on VO x film fabrication by reactive RF sputtering

Abstract

Vanadium oxide VO x films were fabricated by RF magnetron sputtering on various metal buffer layers or silica glass substrates at a substrate temperature of 400 °C. V 2O 5 film was fabricated on a silica glass substrate, and VO 2 films were fabricated on V, W, Fe, Ni, Ti, and Pt metal buffer layers. The transition temperature of the sample on the V buffer layer was 68 °C and that on the W buffer layer was 53 °C. The VO 2 film was also fabricated on the V buffer layer by non-reactive sputtering using a V 2O 5 target at a substrate temperature of 400 °C.