Abstract
This paper examines the impact of quasi-ballistic transport (QBT) on bipolar transistor (BJT) intrinsic terminal current noise by analytically solving the general 3-D minority carrier noise transport equation using Hansen's nonhomogenous boundary conditions with extensions to include injection noise. Transistor noises are further expressed in Y-parameters, as was done in the widely used van Vliet model, with extra corrections accounting for QBT. For 10-nm base width of BJTs without base built-in field, while QBT is significant in affecting IC, Sic is shown to be less than but close to the classic 2qIC.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
