Abstract
Ferroelectric Pb0.90La0.15TiO3 (PLT15) thin films were deposited by sol-gel method on Pt, Pt/Si, ruthenium oxide (RuO2)/Si and RuO2/Pt/Si bottom electrodes. X-ray diffraction, and micro-Raman spectroscopy techniques were used for structural characterization of these films. PLT15 films deposited on RuO2 electrodes show (100) preferred orientation of growth and result in larger crystallites. Films on Pt electrode exhibited higher dielectric constant (1300 at 100 kHz) and high values of Pm, Pr values, 68 and 46 μC/cm2 respectively. AC field dependence of dielectric permittivity at sub-switching fields was fitted using the Rayleigh law. The reversible polarization components estimated from the CV and quasi-static hysteresis measurements for films on Pt/Si (24%), was larger than that of Pt (11%) bottom electrodes. The observed results were correlated with the domain wall pinning at the disturbed film-electrode interface.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
