Abstract
AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.
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