Abstract
AbstractIn this work, a series of boron doped microcrystalline silicon films (μc‐Si:H (B)) were deposited by plasma‐enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 was varied in the range of 0–100 ppm. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X‐ray diffraction (XRD), and Raman spectroscopy. A trend towards increasing crystalline volume fraction and grain size were observed as boron concentration in the samples increased; while the XRD spectra show that the peak intensity at 2θ ≈ 47° decreases and becomes gradually amorphous with the increasing degree of doping. The doped microcrystalline silicon films presented a crystallographic preferential orientation in the plane (220). Correlations between structural and electric properties were also studied. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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